Presentation Information

[10p-N301-9]Investigation of InGaN Growth Conditions on ScAlMgO4 Substrate by RF-MBE

〇Yoshiaki Nishimura1, Trang Nakamoto2, Takashi Fujii3, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST)

Keywords:

InGaN Growth,ScAlMgO4 Substrate