[10p-N302-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N302-11] Electromigration characteristics of NiAl

〇Shuhei Yonehara¹, Junichi Koike¹ (1.Tohoku Univ.)

Keywords:

electromigration,reliability,interconnect

Electromigration (EM) in Cu interconnects has become a significant issue due to the increased current density resulting from the downscaling of ULSI devices. To address this problem, intermetallic compounds have been proposed as alternatives to Cu. In this study, we report on the EM behavior of NiAl, which has low electrical resistivity and strong atomic bonding.