[10p-N302-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-N302-3] A high-noise-immunity SRAM cell for energy-minimum-point-operation PIMs

Katsutoshi Ito¹, 〇Takuma Fujiwara¹, Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Inst. of Sci. Tokyo)

Keywords:

SRAM,Energy-minimum-point operation,high-noise-immunity