[10p-N322-1~13] 15.6 Group IV Compound Semiconductors (SiC)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N322-1] Temperature dependence of electron and hole drift velocities under high electric field in 4H-SiC

〇Daichi Fujioka¹, Ryoya Ishikawa¹, Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:

silicon carbide,high-field drift velocity,anisotropy

Key material properties, such as carrier mobility and drift velocity, are fundamental for predicting device characteristics and gaining insight into the associated physical phenomena. In SiC, while the low-field mobility has been intensively studied , reports on high-field drift velocity are still very limited, especially on its temperature dependence. In this study, the temperature dependence of the drift velocities for electrons and holes parallel and perpendicular to the c-axis were characterized over a wide electric field range (1 – 200 kV/cm) by a conductance method using SiC(1120) samples.