[10p-N322-1~13] 15.6 Group IV Compound Semiconductors (SiC)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N322-2] Detection of Si-related defect levels with close energy positions in electron-irradiated SiC

〇(M1)Kotaro Yamanaka¹, Kyota Mikami¹, Tsunenobu Kimoto¹, Mitsuaki Kaneko¹ (1.Kyoto Univ.)

Keywords:

defect characterization,SiC,DLTS

Deep levels with close energy positions have been theoretically reported in 4H-SiC. However, from an experimental perspective, due to the low energy resolution of the measurement and analysis methods, many deep levels that cannot be separately detected are predicted to exist. In this study, by applying the capacitance transient analysis method based on Bayesian estimation, which was proposed by the authors in the past, multiple deep levels originating from Si-related defects were detected at approximately 0.3 eV from the conduction band edge.