Presentation Information
[10p-N322-9]Comparison of single Shockley-type stacking fault expansion in 4H-SiC under ultraviolet illumination after fluorine or oxygen ion implantation
〇Johji Nishio1, Chiharu Ota1, Ryosuke Iijima1 (1.Toshiba Corporate Lab.)
Keywords:
silicon carbide,single Shockley-type stacking fault,partial dislocation
The introduction of lattice defects through ion implantation has been proposed as an expansion suppression mechanism for single Shockley-type stacking faults in 4H-SiC epitaxial layers. However, the distinction from the effects of Si dangling bonds termination due to implanted impurities has not necessarily been clarified. In this report, we compare fluorine and oxygen and observe significant differences in their expansion suppression behaviors.