[10p-N324-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-2] Reactivity of Fluorinated GaN Surface in Electron-Beam-Assisted Atomic Layer Etching

〇(M1)Daito Shimazu¹, Shunya Hirai¹, Takayoshi Tsutsumi², Makoto Sekine², Kenichi Inoue², Kenji Ishikawa² (1.Nagoya Univ. Eng, 2.Nagoya Univ. cLPS)

Keywords:

Atomic Layer Etching,Electron-Beam,X-ray Photoelectron Spectroscopy

Gallium nitride (GaN) is expected to be a next-generation power semiconductor material, and high-precision, low-damage anisotropic etching techniques are required. In this study, an atomic layer etching (ALE) process combining fluorination using electron beams and XeF₂ with chlorination using chlorine-based gases was evaluated by X-ray photoelectron spectroscopy (XPS). It was found that atmospheric exposure converted Ga-F₃ bonds into Ga-O bonds, suppressing the chlorination reaction. These results suggest that in-situ surface analysis is crucial in electron beam-assisted ALE.