[10p-N324-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-4] Precise Control of Diamond Trench Profile Using Plasma Etching

〇Takuto Oya¹, Trung Nguyen Tran², Thi-Thuy-Nga Nguyen², Kenichi Inoue², Takayoshi Tsutsumi², Kenji Ishikawa² (1.Nagoya Univ., 2.Nagoya Univ. cLPS)

Keywords:

Diamond semiconductor,Plasma etching

To achieve high-precision trench formation in vertical diamond FETs, the relationship between plasma etching conditions and trench geometry was investigated. When using a SiO2 mask with oxygen etching, pillar-like structures were formed due to sputtered redeposition. However, the addition of 1.5% CF4 to O2 effectively suppressed this issue. Although challenges remain in the bottom trench shape, CF4 addition enabled stable trench formation, suggesting that optimization of bias power is essential for further shape control.