[10p-N324-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-7] Effect of Gas-Phase Radical Composition Ratio on CF_x Sticking Probability

〇(M2)Takumi Kurushima¹, Takayoshi Tsutsumi², Makoto Sekine², Kenichi Inoue², Kenji Ishikawa² (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS)

Keywords:

Sticking probability

In simulation-based studies of high aspect ratio etching, accurate particle transport models require reliable values for the sticking probability of radicals on protective films formed inside etching holes. To address this need, we have developed a method to quantitatively determine the sticking probability based on the amount of radicals passing through orifices with various aspect ratios. Using this method, we previously clarified the sticking probability of CF_x radicals in C₄F₈ plasma. In the present study, we replaced the gas with CF₄ and investigated how the radical composition in the gas phase and the film properties affect the sticking probability.