Presentation Information
[10p-N324-8]Protection layer for plasma-CVD SiO2 film against low-temperature HF gas etching.
〇TSUBASA IMAMURA1, Masaki Yamada1 (1.Hitachi R&D)
Keywords:
TMSDMA,gas etching,HF
In highly stacked devices such as 3D NAND, it is necessary to perform lateral etching of films formed on the sidewalls of high-aspect-ratio patterns. In this context, precise control of the lateral etching amount in the stacking direction is critical. To meet this requirement, in addition to conformal etching techniques such as gas-phase etching, a sidewall protection process from the top to the middle portion of the pattern is also necessary. Therefore, we investigated a protective film formation process using silylation treatment, which forms a monolayer film on SiO2 surfaces via gas-phase process.