[10p-N324-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[10p-N324-9] Investigation of the Influence of Depth Dependence of Radical Species in Sidewall Protection during Si Etching

〇Shuto Tsuchioka¹, Kenichi Inoue², Takayoshi Tsutsumi², Makoto Sekine², Kenji Ishikawa² (1.Nagoya Uni., 2.cLPS)

Keywords:

SF6 and O2 plasma,Reactive ion etching,Through Si vias

A precise high-aspect-ratio etching technique for ultra-small via diameters of through-silicon vias is essential for 3D integration of semiconductor devices. reactive ion etching of Si with SF6/O2 has not been elucidated to the point of modeling the reaction mechanism of etching in the microstructure and precise shape control The etching mechanism is not yet understood to the point of precise shape control. In this study, high aspect ratio etching of Si was performed using fluorine and oxygen radicals as parameters, and the effects on the sidewalls, which determine the cross-sectional shape of the formed structures, were investigated.