[10p-N401-1~7] 13.3 Insulator technology

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N401-1] Demonstration of ALD-HKMG Ge MOS structures for Ge (111) GAA nFETs

〇Keisei Kawana^1,2, Noboru Fukuhara¹, Wen Hsin Chang¹, Chia Tsong Chen¹, Toshiyuki Tsutsumi^1,2, Tatsuro Maeda¹ (1.AIST, 2.Meiji Univ.)

Keywords:

semiconductor,Ge(111),GAA

We investigated the ALD-Al2O3/TiN high-k/metal-gate (HKMG) process on Ge(111) substrates and orientation-dependent interface control toward realizing high-mobility Ge-channel gate-all-around (GAA) nFETs. HKMG stacks consisting of low-temperature ALD Al2O3 and sputtered TiN were formed on Ge(111) and Ge(100) substrates. By varying the post-deposition annealing (PDA) temperature, we analyzed interface reactions and interface state density and evaluated the resulting electrical characteristics.