The 86th JSAP Autumn Meeting 2025
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Oral presentation13 Semiconductors : 13.3 Insulator technology

[10p-N401-1~7]13.3 Insulator technology

Wed. Sep 10, 2025 1:30 PM - 3:15 PM JST
Wed. Sep 10, 2025 4:30 AM - 6:15 AM UTC
N401 (Lecture Hall North)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N401-1]Demonstration of ALD-HKMG Ge MOS structures for Ge (111) GAA nFETs

〇Keisei Kawana1,2, Noboru Fukuhara1, Wen Hsin Chang1, Chia Tsong Chen1, Toshiyuki Tsutsumi1,2, Tatsuro Maeda1 (1.AIST, 2.Meiji Univ.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[10p-N401-2]Evaluation of Slow Traps at the Al2O3/Ge MOS Interface Formed by Ozone Oxidation

〇Daiki Takahashi1, Xiao Yu2, Nobuyuki Aoki1, Mengnan Ke3 (1.Chiba Univ., 2.Xidian Univ., 3.Yokohama National Univ.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-N401-3]Study on the preparation of GeO2/Ge structures using Caro's acid

〇Hoshiki Harata1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri. and Tech.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[10p-N401-4]Study on the improvement of GeO2/Ge interface properties by N2 annealing treatment

〇Yuya Kozaki1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri. and Tech.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[10p-N401-5]Two-step deposition and characterization of ultrathin GeO2/Ge interfaces

〇Hiroki Inoue1, Suzuki Takumi1, Yoshitaka Iwasaki1, Tomo Ueno1, Mitaro Namiki1 (1.Tokyo univ. of Agri & Tech)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-N401-6]Preparation and evaluation of GeO2/Ge structure using CVD method.

〇Takumi Suzuki1, Hiroki Inoue1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. Agri. & Tech.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[10p-N401-7]Research on Ge-MOS structure using high dielectric constant materials TiO2

〇Yota Uchida1, Yositaka Iwazaki1, Tomo Ueno1 (1.Tokyo univ. of Agri & Tech)
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