[10p-N401-1~7] 13.3 Insulator technology

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[10p-N401-4] Study on the improvement of GeO2/Ge interface properties by N2 annealing treatment

〇Yuya Kozaki¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri. and Tech.)

Keywords:

semiconductor