[10p-N402-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

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[10p-N402-1] Substrate temperature measurement method for MBE equipment using thermography

〇Satoshi Shimomura¹, Riku Eguchi¹, Hiroto Imai¹, Zhi-Run Li¹ (1.Ehime Univ.)

Keywords:

thermography,substrate temperature,GaAsBi

A 2-inch GaAs substrate with aluminum evaporated onto the backside was attached to an MBE manipulator, and the pyrometer measurements and thermography measurements were plotted against the temperature of the thermocouple on the backside of the substrate. The pyrometer measurements fit a straight line from thermocouple temperatures of 500°C to 750°C, but below 500°C the slope becomes gradually gentler and the measurements deviate from the straight line. On the other hand, the thermography measurements can be approximated by two straight lines, with a slope of 1 above 520°C and a gentler slope of 0.89 below 520°C.