[10p-N402-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[10p-N402-4] Dependence of threshold current characteristics on p-type doping concentration in co-doped InAs/GaAs quantum dot lasers

〇Masahiro Kakuda¹, Jinkwan Kwoen¹, Yasuhiko Arakawa¹ (1.UTokyo)

Keywords:

molecular beam epitaxy