[10p-N402-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N402-5] Formation of above-barrier states in GaAs layer caused by lattice mismatched strain by growth of InAs quantum dots

〇Takato Suzuki¹, Osamu Kojima¹, Toshiyuki Kaizu², Osamu Wada³, Takashi Kita³ (1.Chiba Inst. Tech., 2.Univ. of Electro-Commun., 3.Kobe Univ)

Keywords:

Above-barrier state,InAs quantum dot,Second-order nonlinear polarization

We focus on above-barrier states created by lattice mismatch strain due during epitaxial growth. Previously, we reported that terahertz electromagnetic waves are generated by excitation of the above-barrier states created in the GaAs layer because of the growth of InAs quantum dots on a GaAs substrate. However, the contribution of the carriers generated in the above-barrier states to the generation of nonlinear polarization has been unclear. Therefore, we measured the photoluminescence excitation spectrum detected at the quantum dot photoluminescence energy.