[10p-N402-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N402-7] Effect of low- temperature initial layer on strain relaxation in GaAs/Si

〇Shota Hayakawa¹, Yuito Yasukochi¹, Nobuaki Kojima¹ (1.Toyota Tech. Inst.)

Keywords:

epitaxial growth,Molecular Beam Epitaxy,Migration Enhanced Epitaxy