[10p-N402-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-N402-8] Effects of surface reconstructions on the photoluminescence properties of buried InGaAs/GaAs quantum well after air exposure

Zhao Ma^1,2, 〇Takaaki Mano¹, Akihiro Ohtake¹, Takashi Kuroda^1,2 (1.NIMS, 2.Kyushu Univ.)

Keywords:

Surface reconstruction,GaAs,Oxide

We have studied the oxidation states and photoluminescence (PL) properties buried InGaAs quantum well (QW) . The surfaces of the samples were controlled so that they were either As-rich c(4x4)α or Ga-rich (4x6) structures prior to oxidation. We found that the As/Ga composition ratio at the initial GaAs surface strongly affects the oxidation processes and the resultant PL properties. An oxidized sample whose initial As-rich surface contains a large amount of As oxide, has a significantly lower PL intensity than As-deficient samples.