[10p-N402-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[10p-N402-9] Polarity Control in GaAs/Ge/GaAs{111} Heterostructures

〇Akihiro Ohtake¹, Yusuke Hayashi¹, Takaaki Mano¹ (1.NIMS)

Keywords:

molecular-beam epitaxy,III-V compound semiconductors,polarity inversion

We have successfully fabricated the GaAs/Ge/GaAs heterostructures on the {111}-oriented substrates using molecular-beam epitaxy. The (111)A-oriented GaAs films are grown when the surface of Ge layers is terminated with 1 ML of Ga, while the termination with 1 ML of In leads to the (111)B-oriented GaAs growth.