Presentation Information
[10p-N403-4]Development of Electron Exposure Tool(LEEFET) for EUV Resist Evaluation
〇(M1)Ryuichi YAMASAKI1, Hayase Naoki1, Shinji Yamakawa1, Tetsuo Harada1 (1.University of Hyogo)
Keywords:
EUV,lithography,electron beam
To develop high-sensitivity EUV resists, I investigated the reaction between resist materials and electrons by exposing them to electron beams of various energies. When 185 eV electron beam exposed resist, I obtained similar film thickness reduction with approximately half the dose amount compared to 91.8 eV.
By converting the dose from µC/cm² to mJ/cm² and comparing the exposure results of electrons and photons, I found that the results from different electron beam energies were consistent. Furthermore, the photon exposure results showed that BEUV exhibited 1/6th the sensitivity of EUV.
By converting the dose from µC/cm² to mJ/cm² and comparing the exposure results of electrons and photons, I found that the results from different electron beam energies were consistent. Furthermore, the photon exposure results showed that BEUV exhibited 1/6th the sensitivity of EUV.