Presentation Information
[10p-S102-5]Transistor properties of strained monolayer and stacked WS2
〇Peishan Yu1, Tenta Kitamura1, Takao Oikawa1, Takahiko Endo2, Mina Maruyama3, Susumu Okada3, Hiroo Suzuki4, Yasuhiko Hayashi4, Yasumitsu Miyata2, Hao Ou1, Jiang Pu1 (1.Science Tokyo, 2.NIMS, 3.Univ. of Tsukuba, 4.Okayama Univ.)
Keywords:
TMDC,Strain effect,Transistor
In this study, we tried to fabricate devices capable of applying and controlling strain in monolayer transition metal dichalcogenides (TMDCs) and stacked TMDCs, and to reveal their electrical transport properties. Particularly, we used monolayer WS2 and bilayer WS2 stacked with a small twist angle. We introduced a flexible transistor structure with ion-gel electrolyte, and evaluated the strain dependence of the transistor properties.