The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[10p-S102-1~9]17.3 Layered materials

Wed. Sep 10, 2025 1:00 PM - 3:30 PM JST
Wed. Sep 10, 2025 4:00 AM - 6:30 AM UTC
S102 (Lecture Hall South)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[10p-S102-1]Observation of Valley Current and Local Gate Control in Bilayer MoS2

〇Yusuke Nakayama1, Yusuke Nakamura1, Kenji Watanabe2, Takashi Taniguchi2, Jonathan P. Bird1,3, David K. Ferry4, Nobuyuki Aoki1 (1.Chiba Univ., 2.NIMS, 3.SUNY Buffalo, 4.Arizona State Univ.)
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[10p-S102-2]A trial fabrication of Transistors Utilizing a Graphene Ultra-Short Gate

〇Hirai Tanaka1, Fuminori Sasaki1, Hideaki Sugino1, Toshifumi Irisawa2, Takeo Matsuki3, Daisuke Ohori4, Kazuhiko Endo4, Keisuke Atsumi5, Kosuke Nagashio5, Issei Watanabe6, Hirokazu Fukidome1 (1.RIEC, Tohoku Univ., 2.AIST, 3.Tsukuba Univ., 4.IFS, Tohoku Univ., 5.Tokyo Univ., 6.NICT)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[10p-S102-3]A WSe2 Field-Effect Transistor for Monitoring Inactive Gas via Oxidative Surface Modification

〇CHEN LI1, Ramaraj Sakar Ganesh1, Tabata Hitoshi1, Daisuke Kiriya1 (1.Univ. Tokyo)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[10p-S102-4]Ion-gel-based WS2/WSe2 heterostructure light-emitting devices

〇Haruki Iwasaki1, Shuto Goto1, Soto Hiramatsu1, Takahiko Endo2, Yasumitsu Miyata2, Hao Ou1, Jiang Pu1 (1.Science Tokyo, 2.NIMS)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-S102-5]Transistor properties of strained monolayer and stacked WS2

〇Peishan Yu1, Tenta Kitamura1, Takao Oikawa1, Takahiko Endo2, Mina Maruyama3, Susumu Okada3, Hiroo Suzuki4, Yasuhiko Hayashi4, Yasumitsu Miyata2, Hao Ou1, Jiang Pu1 (1.Science Tokyo, 2.NIMS, 3.Univ. of Tsukuba, 4.Okayama Univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[10p-S102-6]Stability of high-k dielectric films deposited on MoS2 wafers

R. Otake1, S. Li1, T. Nishimura1, K. Kanahashi1, Y. Sakuma2, 〇Kosuke Nagashio1 (1.UTokyo, 2.NIMS)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-S102-7]Gate stack fabrication with resist-free interface on epitaxial monolayer MoS2 on sapphire substrate

〇Tomonori Nishimura1, Shuhong Li1, Ryotaro Otake1, Keisuke Atsumi1, Yoshiki Sakuma2, Takahiro Nagata2, Kaito Kanahashi1, Kosuke Nagashio1 (1.The Univ. of Tokyo, 2.NIMS)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)English Presentation

[10p-S102-8]Elastic Effect-Driven Suspended and Non-Suspended MoS2-Based Surface Acoustic Wave Skin Gas Sensors

〇(P)Sankar Ganesh Ramaraj1, Ryo Fujioka1, Chen Li1, Daisuke Kiriya1, H Yamahara1, H Tabata1 (1.Univ. of Tokyo)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[10p-S102-9]Technology of Sb2Te3 layered contact fabrication by thermal evaporation method and comparison of the device performance of MoS2 nMOSFETs

〇WENHSIN CHANG1, T. Sasaki1,2, M. Kim2, S. Hatayama1, Y. Saito1,2, N. Okada1, T. Endo3, Y. Miyata3, T. Irisawa1 (1.SFRC, AIST, 2.Tohoku Univ., 3.NIMS)
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