Presentation Information

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[10p-S102-9]Technology of Sb₂Te₃ layered contact fabrication by thermal evaporation method and comparison of the device performance of MoS₂ nMOSFETs

〇WENHSIN CHANG¹, T. Sasaki^1,2, M. Kim², S. Hatayama¹, Y. Saito^1,2, N. Okada¹, T. Endo³, Y. Miyata³, T. Irisawa¹ (1.SFRC, AIST, 2.Tohoku Univ., 3.NIMS)

Keywords:

TMDC,MoS2,MOSFET

Comment

To browse or post comments, you must log in.Log in

Back to Session information

Presentation Information

[10p-S102-9]Technology of Sb2Te3 layered contact fabrication by thermal evaporation method and comparison of the device performance of MoS2 nMOSFETs

Keywords:

Comment

[10p-S102-9]Technology of Sb₂Te₃ layered contact fabrication by thermal evaporation method and comparison of the device performance of MoS₂ nMOSFETs