Presentation Information
[7a-N201-2]Crystallization of Mist-CVD Grown Ga2O3 Layer by Laser Annealing
〇Tomomi Hiraoka1, Yuta Nishizuru3, Satoko Shinkai3, Takeru Wakamatsu2, Hikaru Ikeda2, Shizuo Fujita2, Katsuhisa Tanaka2, Yasuo Ohno1 (1.Laser System Inc., 2.Kyoto Univ., 3.Kyushu Inst. Tech.)
Keywords:
Gallium oxide,Mist CVD,Laser annealing
Gallium oxide is a promising material for millimeter-wave wireless power transmission due to its high fT derived from high breakdown field strength. In this study, Sn-doped amorphous gallium oxide films were deposited on m-plane sapphire substrates via mist CVD and locally heated using a laser diode (LD) . Conductivity measurements showed decreased resistance with increasing LD power, and XRD analysis confirmed the formation of the β-phase.