The 86th JSAP Autumn Meeting 2025
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7a-N201-1~10]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Sep 7, 2025 9:15 AM - 12:00 PM JST
Sun. Sep 7, 2025 12:15 AM - 3:00 AM UTC
N201 (Lecture Hall North)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[7a-N201-1]Effect of mist reforming on gallium oxide film formation using mist chemical vapor deposition

〇Tomoki Iwata1, Takayuki Ohta1 (1.Meijo university)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[7a-N201-2]Crystallization of Mist-CVD Grown Ga2O3 Layer by Laser Annealing

〇Tomomi Hiraoka1, Yuta Nishizuru3, Satoko Shinkai3, Takeru Wakamatsu2, Hikaru Ikeda2, Shizuo Fujita2, Katsuhisa Tanaka2, Yasuo Ohno1 (1.Laser System Inc., 2.Kyoto Univ., 3.Kyushu Inst. Tech.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[7a-N201-3]Growth of 2-inch n-type β-Ga2O3 (011) single-crystal by VB method

〇Yuki Ueda1, Takuya Igarashi1, Kimiyoshi Koshi1, Ryoich Sakaguchi1, Taiki Chujo1, Ryo Shinagawa1, Kohei Sasaki1, Akito Kuramata1 (1.Novel Crystal Technology., Inc.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[7a-N201-4]Epitaxial growth of Eu-doped Ga2O3 by sputtering-assisted MOCVD

〇Jun Tatebayashi1,2, Takumi Tanaka1, Riko Masuda1, Kaito Yonaha1, Takuto Oshima1, Masato Ida1, Yasufumi Fujiwara3,4, Masakazu Tane1 (1.Grad. Sch. Eng., The Univ. of Osaka, 2.QIQB, The Univ. of Osaka, 3.Sanken, The Univ. of Osaka, 4.Ritsumeikan Univ.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[7a-N201-5]Epitaxial lateral overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows

〇Yuichi Oshima1, Takashi Shinohe2 (1.NIMS, 2.FLOSFIA)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[7a-N201-6]Growth of α-Ga2O3 Films on 2-inch α-Cr2O3 Templates by Mist CVD Method

〇Ryuma Iida1, Kotono Yamada1, Shiyu Xiao2, Kazuto Murakami2, Yugo Yamaguchi1, Soma Nishio1, Takayosi Onuma1, Tohru Honda1, Morimichi Watanabe2, Katuhiro Imai2, Tomohiro Yamaguchi1 (1.Kogakuin Univ., 2.NGK INSYLATORS, LTD.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[7a-N201-7]Bandgap measurement of Si-doped α-(AlGa)2O3 films with various Al composition

〇Yuta Okuyama1, Hironori Okumura1 (1.Univ. of Tsukuba)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[7a-N201-8]Study on Growth of (010) b-Ga2O3 Over 1000°C by Mist CVD Method

〇(M1)Sei Saito1, Makoto Sugitani1, Tomohiro Yamaguchi1, Shohei Abe1, Kohei Sasaki2, Akito Kuramata2, Tohru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ., 2.Novel Crystal Technology, Inc.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[7a-N201-9]High Concentration Al Doping for MgO Films by Mist CVD Method

〇Sanshiro Nakashima1, Kotaro Ogawa1, Tomohiro Yamaguchi1, Tohru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[7a-N201-10]Electronic Structures of Impurity Doped MgO

〇Yuichi Ota1, Takeyoshi Onuma2 (1.Toyama Pref. Univ., 2.Kogakuin Univ.)
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