Presentation Information
[7a-N201-4]Epitaxial growth of Eu-doped Ga2O3 by sputtering-assisted MOCVD
〇Jun Tatebayashi1,2, Takumi Tanaka1, Riko Masuda1, Kaito Yonaha1, Takuto Oshima1, Masato Ida1, Yasufumi Fujiwara3,4, Masakazu Tane1 (1.Grad. Sch. Eng., The Univ. of Osaka, 2.QIQB, The Univ. of Osaka, 3.Sanken, The Univ. of Osaka, 4.Ritsumeikan Univ.)
Keywords:
rare-earth-doped semiconductors,Gallium oxide,Europium
Recently, rare-earth-doped semiconductors have attracted scientific attention as quantum materials for application in emission-wavelength-stable quantum light emitters towards quantum information technologies. In this contribution, our group focuses on gallium oxide (Ga2O3) as a novel host semiconductor material, establishes a technique to grow Ga2O3 doped with Europium, which is a red phosphor, utilizing our hand-made sputtering-assisted MOCVD system, and performs optical/structural characterization.