[7a-N201-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[7a-N201-7] Bandgap measurement of Si-doped α-(AlGa)₂O₃ films with various Al composition

〇Yuta Okuyama¹, Hironori Okumura¹ (1.Univ. of Tsukuba)

Keywords:

wide bandgap semiconductor,XPS,Alminium Galium Oxide