[7a-N201-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[7a-N201-8] Study on Growth of (010) b-Ga₂O₃ Over 1000°C by Mist CVD Method

〇(M1)Sei Saito¹, Makoto Sugitani¹, Tomohiro Yamaguchi¹, Shohei Abe¹, Kohei Sasaki², Akito Kuramata², Tohru Honda¹, Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.Novel Crystal Technology, Inc.)

Keywords:

Gallium oxide,Crystal growth,Mist CVD method