[7a-N201-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[7a-N201-9] High Concentration Al Doping for MgO Films by Mist CVD Method

〇Sanshiro Nakashima¹, Kotaro Ogawa¹, Tomohiro Yamaguchi¹, Tohru Honda¹, Takeyoshi Onuma¹ (1.Kogakuin Univ.)

Keywords:

Magnesium Zinc Oxide,MIst Chemical Vapor Deposition,Ultra-Wide Band Gap

Rock-salt MgZnO has attracted attention as a promising material for next-generation ultraviolet (UV) and vacuum ultraviolet (VUV) light sources due to its capability for VUV emission at room temperature. In this presentation, we report on the homoepitaxial growth of highly Al-doped MgO on MgO(100) substrates, as a preliminary study toward the development of current-injection devices based on rock-salt MgZnO using the mist CVD method. The growth was carried out by controlling the upstream furnace environment, aiming to investigate the effects of high-concentration Al incorporation.