[7a-N301-1~11] 15.4 III-V-group nitride crystals

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[7a-N301-1] Study of Al/AlN layer formation during low-temperature AlN growth by RF-MBE under Al-rich conditions

〇Ren Tanaka¹, Sigeharu Kawabata¹, Trang Nakamoto², Takashi Fujii³, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST)

Keywords:

RF-MBE,aluminum nitride,crystal growth