The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[7a-N301-1~11]15.4 III-V-group nitride crystals

Sun. Sep 7, 2025 9:00 AM - 12:00 PM JST
Sun. Sep 7, 2025 12:00 AM - 3:00 AM UTC
N301 (Lecture Hall North)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[7a-N301-1]Study of Al/AlN layer formation during low-temperature AlN growth by RF-MBE under Al-rich conditions

〇Ren Tanaka1, Sigeharu Kawabata1, Trang Nakamoto2, Takashi Fujii3, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[7a-N301-2]Microstructural Characterization of RF-MBE Low-Temperature-Grown AlN Films Using Transmission Electron Microscopy

〇Shigeharu Kawabata1, Ren Tanaka1, Trang Nakamoto2, Takashi Fujii3, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[7a-N301-3]Improved Crystallinity of Semipolar (11-22) AlN by Sputtering and Annealing Method

〇Daiki Kobayashi1, Ryota Akaike1,2, Kensei Oya1, Hiroki Yasunaga2,3, Takao Nakamura1,2, Hideto Miyake1,2 (1.Grad. Sch. of Eng., Mie Univ., 2.IC-SDF, Mie Univ., 3.ORIP, Mie Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[7a-N301-4]High-Temperature AlN Growth on Sputtered AlN by Metalorganic Vapor Phase Epitaxy

〇(M2)Yuto Matsubara1, Koki Fujii1, Yusuke Takayanagi1, Yukiya Hayashi1, Soki Shimizu1, Yuusuke Takashima1,2, Yoshiki Naoi1,2, Atsushi Maeoka3, Atsushi Osawa3, Shigeru Takatsuji3, Takahiro Kimura3, Kentaro Nagamatsu1,2 (1.Faculty of Science and Engineering, Tokushima Univ., 2.pLED, Tokushima Univ, 3.SCREEN Holdings Co. Ltd.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[7a-N301-5]Crystallographic Orientation Control of Nonpolar AlN via Thermal Treatment
of r-Plane Sapphire Substrates

〇Shinnosuke Mori1, Ryota Akaike1,2, Hiroki Yasunaga2,3, Takao Nakamura1,2, Hideto Miyake1,2 (1.Grad. Sch. of Eng., Mie Univ., 2.IC-SDF, Mie Univ., 3.ORIP, Mie Univ.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[7a-N301-6]AlN epitaxial growth on diamond (111) substrates by AFHT-MOCVD

〇Xu-Qiang Shen1, Hiromitsu Kato1, Yukako Kato1, Toshiharu Makino1, Kazutoshi Kojima1 (1.AIST)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[7a-N301-7]Estimation of Screw Dislocation Density in AlN from X-ray Rocking Curve

〇Rennosuke Hara1, Ryouta Akaike1,2, Hiroki Yasunaga2,3, Takao Nakamura1,2, Hideto Miyake1,2 (1.Grad. Sch. of Eng., Mie Univ., 2.IC-SDF, Mie Univ., 3.ORIP, Mie Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[7a-N301-8]Unique strain relaxation mechanism of GaN and AlGaN on AlN substrates

〇Shun Washiyama1, Shin-ichiro Inoue1 (1.NICT)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[7a-N301-9]Fabrication of AlGaN Multiple Quantum Wells on Semipolar (11-22) AlN by Sputtering and Annealing Method

〇Kensei Oya1, Ryota Akaike1,2, Hiroki Yasunaga2,3, Takao Nakamura1,2, Hideto Miyake1,2 (1.Grad. Sch. of Eng., Mie Univ., 2.IC-SDF, Mie Univ., 3.ORIP, Mie Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[7a-N301-10]In-situ ohmic contacts on Si-doped AlGaN with high Al content via pulsed sputtering

〇(DC)Aiko Naito1, Kohei Ueno1, Hiroshi Fujioka1 (1.IIS, UTokyo)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N301-11]Fabrication of AlN/Al0.9Ga0.1N/AlN multi-channel transistor with ultra-high breakdown voltage

〇Takao Kozaka1, Kohei Ueno1, Hiroshi Fujioka1 (1.IIS)
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