[7a-N301-1~11] 15.4 III-V-group nitride crystals

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N301-11] Fabrication of AlN/Al_0.9Ga_0.1N/AlN multi-channel transistor with ultra-high breakdown voltage

〇Takao Kozaka¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS)

Keywords:

AlN,transistor,HEMT