[7a-N301-1~11] 15.4 III-V-group nitride crystals

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[7a-N301-6] AlN epitaxial growth on diamond (111) substrates by AFHT-MOCVD

〇Xu-Qiang Shen¹, Hiromitsu Kato¹, Yukako Kato¹, Toshiharu Makino¹, Kazutoshi Kojima¹ (1.AIST)

Keywords:

AlN

Single crystalline AlN/single crystalline diamond structure for better SAW device performance is expected. However, it is difficult to heteroepitaxially grow high quality AlN on diamond substrate. In this paper, we report the results of single crystalline AlN epilayers on the single crystalline diamond (111) substrates grown by AFHT-MOCVD.