[7a-N322-1~11] 13.7 Compound and power devices, process technology and characterization

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[7a-N322-2] Highest Maximum Frequency of Operation (f_MAX)>120 GHz Diamond MOSFET

Niloy Chandra Saha¹, Masanori Eguchi², Yoshiki Muta¹, Toshiyuki Oishi¹, Atsushi Tomiki³, 〇Makoto Kasu^1,4 (1.Dept. Electric Electronic Eng., Saga Univ., 2.Synchrotron Research Center, Saga Univ., 3.JAXA Institute of Space and Astronautical Science, 4.Diamond Semiconductor Co., Ltd.)

Keywords:

diamond,power device

We successfully demonstrate Diamond MOSFET with the highest maximum frequency of oscillation (fMAX) >120 GHz.