The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[7a-N322-1~11]13.7 Compound and power devices, process technology and characterization

Sun. Sep 7, 2025 9:00 AM - 12:00 PM JST
Sun. Sep 7, 2025 12:00 AM - 3:00 AM UTC
N322 (Lecture Hall North)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N322-1]Fabrication of 147 nm T-shaped submicron gate electrode for diamond MOSFETs by electron beam lithography

〇(M1)Yoshiki Muta1, Niloy Chandra Saha1, Masanori Eguchi2, Toshiyuki Oishi1, Atsushi Tomiki3, Makoto Kasu1,4 (1.Dept. Electrical Electronic Eng., Saga Univ., 2.Synchrotron Light Application Center, Saga Univ., 3.ISAS/JAXA, 4.Diamond Semiconductor Co., Ltd)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[7a-N322-2]Highest Maximum Frequency of Operation (fMAX)>120 GHz Diamond MOSFET

Niloy Chandra Saha1, Masanori Eguchi2, Yoshiki Muta1, Toshiyuki Oishi1, Atsushi Tomiki3, 〇Makoto Kasu1,4 (1.Dept. Electric Electronic Eng., Saga Univ., 2.Synchrotron Research Center, Saga Univ., 3.JAXA Institute of Space and Astronautical Science, 4.Diamond Semiconductor Co., Ltd.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N322-3]Impact of forming gas annealing on the interface and oxide traps in SiO2/β-Ga2O3 MOS structures

〇Kensei Maeda1, Takuma Kobayashi1, Masahiro Hara1, Heiji Watanabe1 (1.UOsaka)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[7a-N322-4]Reduction of interface state density in Al2O3/β-Ga2O3 (001) MOS structures by employing O3 as an oxidant for ALD process

〇Atsushi Tamura1, Hiroyasu Maekawa2, Koji Kita1,2 (1.GSFS, The Univ. of Tokyo, 2.School of Eng., The Univ. of Tokyo)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N322-5]Effect of annealing on MOS interface properties and donor density of SiO2/β-Ga2O3 stacks

〇Takumi Morita1, Takuma Kobayashi1, Kensei Maeda1, Masahiro Hara1, Heiji Watanabe1 (1.UOsaka)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N322-6]Hall Measurement of Highly Si-Doped n-Ga2O3 by Hot Ion Implantation

〇(M2)Kotaro Yagi1, Daisuke Matsuo2, Shun Konno2, Kosuke Usui2, Yasunori Andoh3, Kohei Tanaka2, Masataka Higashiwaki1,4 (1.Osaka Metropolitan Univ., 2.Nissin Ion Equipment, 3.Nissin Electric, 4.NICT)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N322-7]Controlling the oxygen partial pressure of NiO films for β-Ga2O3 MPS diodes

〇Yui Sasaki1, Hironori Okumura1, Aboulaye Traore2, Yun Jia1, Kota Nakano1, Sakurai Takeaki1 (1.Tsukuba Univ., 2.USPN)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N322-8]Ab initio calculations of carbon-vacancy pairs in β-Ga2O3 for quantum applications

〇(B)Ryota Yamada1, Sosuke Iwamoto1, Masahiro Hara1, Heiji Watanabe1, Takuma Kobayashi1 (1.UOsaka)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[7a-N322-9]Crystal growth of r-GeO2 thin film on 4H-SiC substrate using buffer layer

〇Toya Yagura1,2, Yuri Shimizu1, Akiyoshi Kudo1, Toyosuke Ibi1, Shinpei Matsuda1, Kentaro Kaneko1,3 (1.Patentix Inc., 2.Col. of Sci. & Eng. Ritsumeikan Univ., 3.ROST Ritsumeikan Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N322-10]Characterization of rutile-type GeO2 using ion implantation process.

〇Yuri Shimizu1, Ai Kono1, Toyosuke Ibi1, Shinpei Matsuda1, Kentaro Kaneko1,2 (1.Patentix Inc., 2.ROST Ritsumeikan Univ.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[7a-N322-11]Evaluation of physical properties of r-GeO2 bulk crystals

〇Kentaro Kawanishi1, Yuri Shimizu1, Toyosuke Ibi1, Shinpei Matsuda1, Kentaro Kaneko1,2 (1.Patentix Inc., 2.ROST Ritsumeikan Univ)
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