[7a-N322-1~11] 13.7 Compound and power devices, process technology and characterization

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N322-3] Impact of forming gas annealing on the interface and oxide traps in SiO₂/β-Ga₂O₃ MOS structures

〇Kensei Maeda¹, Takuma Kobayashi¹, Masahiro Hara¹, Heiji Watanabe¹ (1.UOsaka)

Keywords:

Ga2O3,MOS,Interface state density