[7a-N322-1~11] 13.7 Compound and power devices, process technology and characterization

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[7a-N322-4] Reduction of interface state density in Al₂O₃/β-Ga₂O₃ (001) MOS structures by employing O₃ as an oxidant for ALD process

〇Atsushi Tamura¹, Hiroyasu Maekawa², Koji Kita^1,2 (1.GSFS, The Univ. of Tokyo, 2.School of Eng., The Univ. of Tokyo)

Keywords:

Ga2O3,MOS,interface state density

The interface characteristics of β-Ga₂O₃ MOS structures vary greatly depending on the insulating film material and annealing. In this study, we successfully reduced the interface state density (D_it) to approximately 1×10¹⁰ cm⁻² eV⁻¹ by depositing ALD-Al₂O₃ on a β-Ga₂O₃ (001) substrate and using O₃ as an oxidant. This shows that it is possible to reduce D_it at low temperatures PDA (600°C) by using O₃, which has strong oxidizability.