Presentation Information
[7a-N322-5]Effect of annealing on MOS interface properties and donor density of SiO2/β-Ga2O3 stacks
〇Takumi Morita1, Takuma Kobayashi1, Kensei Maeda1, Masahiro Hara1, Heiji Watanabe1 (1.UOsaka)
Keywords:
Ga2O3,MOS,Donor Density