[7a-N322-1~11] 13.7 Compound and power devices, process technology and characterization

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N322-5] Effect of annealing on MOS interface properties and donor density of SiO₂/β-Ga₂O₃ stacks

〇Takumi Morita¹, Takuma Kobayashi¹, Kensei Maeda¹, Masahiro Hara¹, Heiji Watanabe¹ (1.UOsaka)

Keywords:

Ga2O3,MOS,Donor Density