Presentation Information
[7a-N322-7]Controlling the oxygen partial pressure of NiO films for β-Ga2O3 MPS diodes
〇Yui Sasaki1, Hironori Okumura1, Aboulaye Traore2, Yun Jia1, Kota Nakano1, Sakurai Takeaki1 (1.Tsukuba Univ., 2.USPN)
Keywords:
Wide bandgap semiconductor,Ga2O3,NiO