Presentation Information

[7a-N322-7]Controlling the oxygen partial pressure of NiO films for β-Ga2O3 MPS diodes

〇Yui Sasaki1, Hironori Okumura1, Aboulaye Traore2, Yun Jia1, Kota Nakano1, Sakurai Takeaki1 (1.Tsukuba Univ., 2.USPN)

Keywords:

Wide bandgap semiconductor,Ga2O3,NiO