[7a-N405-1~6] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N405-5] Dependence on number of RF inputs and frequency in an Ag₂Te resistance switching device

〇(M1)Jun Yamasawa¹, Yuta Tsuchihashi¹, Toshihiro Nakaoka¹ (1.Sophia Univ.)

Keywords:

chalcogenide,RF wave,resistance switching

Analog memory devices that emulate synaptic behavior in the human brain have attracted considerable attention. In particular, there has been growing interest in utilizing multilevel resistance states in resistive memories such as CBRAM (Conductive Bridge RAM) and PRAM (Phase-Change RAM) to represent synaptic weights. In this study, we report that the resistances of a resistance switching device based on monoclinic Ag₂Te can be modulated by applying RF waves.