[7a-N405-1~6] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N405-6] Crystallization Behavior of Sputter-Deposited Amorphous VTe₂ Thin Film

〇(M2)Shuhei Orihara¹, Yi Shuang^1,2, Daisuke Ando¹, Yuji Sutou^1,2 (1.Tohoku Univ. (Eng), 2.Tohoku Univ. (AIMR))

Keywords:

thin film,phase-change,VTe2

Transition metal dichalcogenides (TMDs) have attracted significant attention for next-generation electronics due to their unique properties, such as scalability down to the atomic layer and high carrier mobility. However, their fabrication has relied on chemical vapor deposition (CVD) methods, which typically require high-temperature processes. In this study, we deposited VTe₂ thin films, which is a kind of TMD, using radio-frequency (RF) magnetron sputtering, which does not require high-temperature processing, and investigated their crystallization behavior during annealing process.