[7a-P04-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[7a-P04-1] Electron Concentration Dependence of Optical Absorption Properties of Si-doped GaAsN

〇Toma Sadakuni¹, Mitsuto Hiranuma¹, Takashi Tsukasaki², Miki Fujita³, Toshiki Makimoto¹ (1.Waseda Univ., 2.ADCAP, 3.NIT, Ichinoseki College)

Keywords:

Si-doped GaAsN,optical absorption properties,RF-MBE

The electron concentration dependence of the optical absorption properties of Si-doped GaAsN was evaluated. The optical absorption edge (Eab) of Si-doped GaAsN increased compared to that of undoped GaAsN. Furthermore, as the electron concentration increased, the difference between the Eab of Si-doped GaAsN and the Eab of undoped GaAsN (ΔEab) also increased. This is thought to result from the localized levels distributed by N addition being occupied in order from the deepest to the shallowest levels by Si doping, causing electrons to be excited to shallower levels