The 86th JSAP Autumn Meeting 2025
Advanced Search

Session Details

Poster presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[7a-P04-1~10]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Sun. Sep 7, 2025 9:30 AM - 11:30 AM JST
Sun. Sep 7, 2025 12:30 AM - 2:30 AM UTC
P04 (Gymnasium)

[7a-P04-1]Electron Concentration Dependence of Optical Absorption Properties of Si-doped GaAsN

〇Toma Sadakuni1, Mitsuto Hiranuma1, Takashi Tsukasaki2, Miki Fujita3, Toshiki Makimoto1 (1.Waseda Univ., 2.ADCAP, 3.NIT, Ichinoseki College)

[7a-P04-2]Growth Temperature Dependence of Photoluminescence Characteristics of AlGaAsN

〇Sawa Abe1, Natsu Minami1, Sota Tanaka1, Takashi Tsukasaki2, Miki Fujita3, Toshiki Makimoto1 (1.Waseda Univ., 2.ADCAP, 3.NIT, Ichinoseki College)

[7a-P04-3]Growth Condition Optimization of Al0.25In0.75Sb/InSb Heterostructure for High Electron Mobility and Low Sheet Resistance

〇Ryuto Machida1, Kouichi Akahane1, Shinsuke Hara1, Akifumi Kasamatsu1, Issei Watanabe1 (1.NICT)

[7a-P04-4]Size Control and PL Characteristics for 2-Layer Stacked InSb Quantum Dots on GaSb

〇Taiga Kito1, Yuto Onoda1, Arisa Seguchi1, Shin-ichiro Gozu2, Akira Endoh1, Hiroki Fujishiro1 (1.TUS, 2.AIST)

[7a-P04-5]Growth of AlxIn1-xSb thin films by magnetron sputtering

〇Yuto Ariji1, Hiroyuki Yaguchi1, Sachie Fujikawa1 (1.Saitama Univ.)

[7a-P04-6]Growth and characterization of InSb1-xNx thin films by MBE

〇Yuki Shirakawa1, Kosuke Teramae1, Hiroyuki Yaguchi1, Sachie Fujikawa1 (1.Saitama Univ.)

[7a-P04-7]Raman scattering characterization of InSb1-xNx thin films grown by sputtering

〇Kosuke Teramae1, Hiroyuki Yaguchi1, Sachie Fujikawa1 (1.Saitama Univ.)

[7a-P04-8]Effect of Different Growth Conditions on the Growth Model of Low-Temperature-Grown GaAs1-xBix

〇Fumiya Abe1, Tatsuyoshi Arakawa1, Yoriko Tominaga1, Keisuke Minehisa2, Fumitaro Ishikawa2 (1.Hiroshima Univ., 2.Hokkaido Univ.)

[7a-P04-9]Droplets Formation on the Surface of Low-Temperature-grown InyGa1-yAs1-xBix after Annealing

〇Kyosuke Ariyoshi1, Tatsuyoshi Arakawa1, Yoriko Tominaga1, Keisuke Minehisa2, Fumitaro Ishikawa2 (1.Hiroshima Univ., 2.Hokkaido Univ)

[7a-P04-10]Fabrication of Porous Si(001) substrate with different porosity and evaluation of its effects on GaAs/Porous Si(001)

〇Shintaro Osaki1, Ryunosuke Minamoto1, Hidetosi Suzuki1 (1.Miyazaki Univ.)
Back to Category List