Presentation Information
[7a-P04-2]Growth Temperature Dependence of Photoluminescence Characteristics of AlGaAsN
〇Sawa Abe1, Natsu Minami1, Sota Tanaka1, Takashi Tsukasaki2, Miki Fujita3, Toshiki Makimoto1 (1.Waseda Univ., 2.ADCAP, 3.NIT, Ichinoseki College)
Keywords:
Be-doped AlGaAsN,RF-MBE,Photoluminescence measurement
In this study, from the growth temperature dependence in the PL emission peak of Be-doped AlGaAsN grown at 480 °C, we observed the PL emission peak through the localized level and the peak through the conduction band, and compared to Be-doped AlGaAsN grown at 580 °C, the PL emission intensity of the peak through the localized level was about 20 times higher than that of Be-doped AlGaAsN grown at 580 °C. In addition, at low temperatures, the peaks related to the localized levels are dominant in GaAsN, whereas strong emission of peaks originating from the conduction band is observed in AlGaAsN.