[7a-P04-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[7a-P04-2] Growth Temperature Dependence of Photoluminescence Characteristics of AlGaAsN

〇Sawa Abe¹, Natsu Minami¹, Sota Tanaka¹, Takashi Tsukasaki², Miki Fujita³, Toshiki Makimoto¹ (1.Waseda Univ., 2.ADCAP, 3.NIT, Ichinoseki College)

Keywords:

Be-doped AlGaAsN,RF-MBE,Photoluminescence measurement

In this study, from the growth temperature dependence in the PL emission peak of Be-doped AlGaAsN grown at 480 °C, we observed the PL emission peak through the localized level and the peak through the conduction band, and compared to Be-doped AlGaAsN grown at 580 °C, the PL emission intensity of the peak through the localized level was about 20 times higher than that of Be-doped AlGaAsN grown at 580 °C. In addition, at low temperatures, the peaks related to the localized levels are dominant in GaAsN, whereas strong emission of peaks originating from the conduction band is observed in AlGaAsN.