Presentation Information
[7a-P05-45]Direct growth of WS2 thin film by sulfurization of W thin film at Au/SiO2 interface
〇(M2)Chika Akimoto1, Keiji Ueno1, Hong En Lim1 (1.Saitama Univ.)
Keywords:
tungsten disulfide,direct interfacial growth
WS2, a type of transition metal dichalcogenide, is expected to be applied to field-effect transistors because of its good semiconductor properties. In most conventional device fabrication, electrodes are fabricated after growing the thin film, but problems such as contamination by photoresist residue and degradation of the thin film may occur, which may degrade device performance. Therefore, we attempted to directly grow WS2 thin films by preparing W and Au thin films on substrates in advance and sulfurizing them.