Presentation Information
[7a-P05-75]Performance enhancement of dual-gate FET using F6-TCNNQ monolayer on WSe2
〇Kensho Matsuda1, Yuto Noguchi1, Seto Taiki1, Mengnan Ke2, Shohei Kumagai3, Toshihiro Okamoto3, Nobuyuki Aoki1 (1.Chiba Univ., 2.Yokohama National Univ., 3.Science Tokyo Univ.)
Keywords:
Semiconductor,Transition Metal Dichalcogenides,Atomic layer deposition