Presentation Information
[7a-P05-78]Hysteresis properties of MoS2 FETs with TaOx gate dielectrics grown on TaS2
〇(M2)YUTARO SAHASHI1, Inada Mitsuru1, Ueno Keiji2, Yamamoto Mahito1 (1.Kansai Univ., 2.Saitama Univ.)
Keywords:
2D semiconductor,tantalum oxide,high-k dielectric
Owing to its high dielectric constant, tantalum oxide (TaOx) has great promise for applications in a gate dielectric for 2D semicomductor FETs. We have fabricated MoS2 FETs using TaOx formed by O3 oxidation of TaS2, and have realized low-voltage operations below 1 V. In this study, we evaluated the hysteresis properties of MoS2 FETs with the TaOx gate dielectrics.