Presentation Information
[7a-S103-6]Investigation of the Surface State after Oxidant Supply in SiON Films
〇Shogo Shimada1, Mitsuhiro Hakamatsuka1, Atshushi Sano1, Shinaya Hattori1, Satoshi Yabu1, Hajime Karasawa1 (1.KOKUSAI ELECTRIC)
Keywords:
Surface analysis,Molecular Simulation
In order to understand mechanism of surface state after oxidant supply in SiON films, surface analysis with the various sample preparing amount of oxidant exposure and theoretical evaluation using molecular simulation have studied.
The results of Static-SIMS analysis showed that SiOH- was not observed even after exposure to the oxidizing agent, while peaks attributed to SiNH2+ were detected.
By correlating these findings with GPC data, we identified the active surface sites.
In this presentation, we will also discuss the surface state in terms of theoretical evaluation.
The results of Static-SIMS analysis showed that SiOH- was not observed even after exposure to the oxidizing agent, while peaks attributed to SiNH2+ were detected.
By correlating these findings with GPC data, we identified the active surface sites.
In this presentation, we will also discuss the surface state in terms of theoretical evaluation.