Session Details

[7a-S103-1~7]Atomic Layer Process (ALP) analysis and application technologies (2)

Sun. Sep 7, 2025 10:00 AM - 12:05 PM JST
Sun. Sep 7, 2025 1:00 AM - 3:05 AM UTC
S103 (Lecture Hall South)
Takeshi Momose(Kumamoto Univ.), Yukihiro Shimogaki(Univ. of Tokyo)
最先端半導体デバイス製造において重要性が高まる原子層成長(ALD)・エッチング(ALE)を対象に、プロセスサイエンスを中心とした選択性制御、その場観察、原子レベルシミュレーションなどに関する最新研究および将来技術を議論します。午前の部では、2件の招待講演(韓国ALDワークショップの紹介、機械学習を用いた製膜プロセス最適化)を予定しています。
Sponsor
Matlantis T15_TEL T15_PIEZO       ALDJapan 
 TANAKA  KJC  大陽日酸  Chipmetrics
    Horiba    GasPhaseGrowth
   JAC

[7a-S103-1]Opening

〇Yukihiro Shimogaki1 (1.The Univ. Tokyo)
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[7a-S103-2]20 Years of the Korea ALD Workshop: History and Development

〇Hyeongtag Jeon1 (1.Hanyang University)
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[7a-S103-3]Development of Semiconductor Deposition Processes Using Machine Learning and Mathematical Models

〇Hirokazu Kyokane1 (1.Tokyo Electron Technology Solutions Ltd.)
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[7a-S103-4]Investigation of the steric hindrance effect of CCTBA adsorption in Co-ALD

〇Naoki Tamaoki1, Jun Yamaguchi1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. Tokyo)
Comment()

[7a-S103-5]Investigation of Residual Carbon Concentration in Al2O3-ALD
Using Kinetic Monte Carlo Simulation

〇(M2)Yichen ZOU1, Yuxuan Wu1, Jun Yamaguchi1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. Tokyo)
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[7a-S103-6]Investigation of the Surface State after Oxidant Supply in SiON Films

〇Shogo Shimada1, Mitsuhiro Hakamatsuka1, Atshushi Sano1, Shinaya Hattori1, Satoshi Yabu1, Hajime Karasawa1 (1.KOKUSAI ELECTRIC)
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[7a-S103-7]Effect of Ligands of Amino Silane Precursors on SiO2 Growth

〇(D)Yuuki Tsuchiizu1, Teruhisa Otsuka2, Yamazaki Masashi2, Ohori Daisuke1, Endo Kazuhiko1 (1.Tohoku Univ., 2.Natl. Inst. of Adv. Ind. Sci. and Tech.)
Comment()