Session Details
[7a-S103-1~7]Atomic Layer Process (ALP) analysis and application technologies (2)
Sun. Sep 7, 2025 10:00 AM - 12:05 PM JST
Sun. Sep 7, 2025 1:00 AM - 3:05 AM UTC
Sun. Sep 7, 2025 1:00 AM - 3:05 AM UTC
S103 (Lecture Hall South)
[7a-S103-1]Opening
〇Yukihiro Shimogaki1 (1.The Univ. Tokyo)
[7a-S103-2]20 Years of the Korea ALD Workshop: History and Development
〇Hyeongtag Jeon1 (1.Hanyang University)
[7a-S103-3]Development of Semiconductor Deposition Processes Using Machine Learning and Mathematical Models
〇Hirokazu Kyokane1 (1.Tokyo Electron Technology Solutions Ltd.)
[7a-S103-4]Investigation of the steric hindrance effect of CCTBA adsorption in Co-ALD
〇Naoki Tamaoki1, Jun Yamaguchi1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. Tokyo)
[7a-S103-5]Investigation of Residual Carbon Concentration in Al2O3-ALD
Using Kinetic Monte Carlo Simulation
〇(M2)Yichen ZOU1, Yuxuan Wu1, Jun Yamaguchi1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. Tokyo)
[7a-S103-6]Investigation of the Surface State after Oxidant Supply in SiON Films
〇Shogo Shimada1, Mitsuhiro Hakamatsuka1, Atshushi Sano1, Shinaya Hattori1, Satoshi Yabu1, Hajime Karasawa1 (1.KOKUSAI ELECTRIC)
[7a-S103-7]Effect of Ligands of Amino Silane Precursors on SiO2 Growth
〇(D)Yuuki Tsuchiizu1, Teruhisa Otsuka2, Yamazaki Masashi2, Ohori Daisuke1, Endo Kazuhiko1 (1.Tohoku Univ., 2.Natl. Inst. of Adv. Ind. Sci. and Tech.)